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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors B772 FEATURES Power dissipation 2. COLLETOR PCM: 500 mW (Tamb=25) 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 CLASSIFICATION OF hFE(1) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=-2V, IC= -100mA IC=-2A, IB= -0.2A IC=-2A, IB= -0.2A VCE= -5V, Transition frequency C=-0.1A unless otherwise specified) Test conditions MIN -40 -30 -6 TYP MAX UNIT V V V Ic=-100A , IE=0 IC= -10 mA , IB=0 IE= -100 A, IC=0 VCB= -40 V, IE=0 VCE=-30 V, IB=0 VEB=-6V, IC=0 VCE= -2V, IC= -1A -1 -10 -1 60 32 -0.5 -1.5 400 A A A V V fT f = 10MHz 50 MHz CLASSIFICATION OF hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 |
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